GSF31012 fast recovery stud diode ul-certified insulating sleeve voltage up to 1200 v average current 125 a surge current 2,8 ka blocking characteristics characteristic conditions v rrm repetitive peak reverse voltage 1200 v v rsm non-repetitive peak reverse voltage 1300 v i rrm repetitive peak reverse current, max. v rrm , single phase, half wave, tj = tjmax 35 ma forward characteristics i f(av) average forward current sine wave,180 conduction, th = 100 c 125 a i f(rms) r.m.s. forward current sine wave,180 conduction, th = 100 c 196 a i fsm surge forward current non rep. half sine wave, 50 hz, v r = 0 v, t j = t jmax 2,8 ka i2t i2 t for fusing coordination 39 ka2s v f(to) threshold voltage t j = t jmax 1,2 v r f forward slope resistance t j = t jmax 2,3 m w v fm peak forward voltage, max forward current i f = 450 a, tj = 25c 2,5 v switching characteristics t rr rverse recovery time, typ t j = 125 c , i f = 350 a, di/dt = -25 a/s v r =30 v 1 s thermal and mechanical characteristics r th(j-c) thermal resistance (junction to case) double side cooled 0,25 c/w r th(c-h) thermal resistance (case to heatsink) double side cooled 0,08 c/w t jmax max operating junction temperature 150 c t stg storage temperature -40 / 150 c m mounting torque 10 nm mass 100 g ordering information cathode on stud anode on stud GSF31012-vvtt gsfr31012-vvtt vv=v rrm /100 tt= trr {s] * 10 example GSF31012-1210 1200 v 1 s @ 25c document GSF31012t001 value gps - green power semiconductors spa factory: via ungaretti 10, 16157 genova, italy phone: +39-010-667 8800 fax: +39-010-667 8812 web: www.gpsemi.it e-mail: info@gpsemi.it green power semiconductors dimensions in inch 3/8 " - 24 unf thd
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